Инженер по работе с клиентами (JUSUNG солнечная энергетика)

Описание








































SERGEY N. ZARETSKIY













PhD. in





Physico





-





Mathematic





al













Sciences





(


Nationality


/Citizenship


-Russian, Visa status F-5 Permanent Resident





in South Korea)













Languages:





Russian-native














English





-advanced level














Korean-





intermediate level























Present address





:











17156,






South Korea





,





Gy





e





ong





g





i





-do,





Yongin





-city,





Ch





eoin-gu





,Yangji





-myeon





,





Chugye-ro





42















Mobile


(South Korea)


:


82-


10-4321


-0744








E-mail: sergey-zaretskiy


@mail.ru
























Highlights of





Professional





experience:

















































2005 ~ Present


,





Eugene technology Co Ltd. R&D Center, Yongin, South Korea















Plasma Products Development Team.





Research Advisor & Cooperate Director.



















*












Experimental studies and technology optimization of thin films deposition -ultra thin Silicon with in-situ seeding, undoped/doped Silicon, selective Silicon, SiO2, Si3N4, with controlled compositions, uniformity, stress, roughness and step coverage







f







or wide range of applications in varied semiconductor devices.

























*Development and optimization of mass production semiconductor equipment.












PECVD, PEALD, Plasma Treatment PO/PN,












Thermal CVD,












Dry Cleaning processes s












ystems setup & evaluation at the customer sites.












Head engineer numbers of JEPs, JDPs with Samsung, SK Hynix.




















*HW, process technology optimization with ICP, Balanced ICP and CCP Plasma Sources for semiconductor equipments with various RF System configurations 13.56 MHZ and 27.12MHz.









* Strong Experience in all above mentioned





systems


HW and processes setup


,


yield optimization, continuous equipment and process quality improvement. Deep knowledge of various thin film analysis techniques and deposition physics.












*Plasma processes equipment


'


s p


art


leader


and


R&D


team leader experience.























2002-2004,





Korea Research Institute of Standards and Science,





Nano





-surface division,











Daedeok





Science Town,





Daejon,





South Korea.

















Visiting Scientist

















*












Thermal CVD synthesis of Carbon Nanonubes with controlled density and diameters using various hydrocarbons.




















* Experimental study of correlation between catalyst materials, growth parameters, yield, quality, thickness of CNT.


























2000-2001,








Innovation center,





Nano





-technology team,















LG-Electronics Institute of Technology, Seoul, South Korea.















Research Engineer

















*












S












ynthesis and growth optimization of Carbon Nanotubes by CVD. Investigation of electrical transport in metallic and p-type semiconductor carbon nanotubes grown on the






patterned substrates.

















* Experimental study






of growth conditions






SW and MW






Carbon






Nanotubes






.




























1993-






July






2000,











Laboratory of Heterogeneous Synthesis, Institute Physical Chemistry, Russian Academy of Sciences, Moscow, Russia













MS student' science work,


Ph.D


course, Research Scientist


.










































*



















Development, tuning and calibration of equipment for non-destructive control of defects composition in semiconductor materials by method laser spectroscopy for the purpose of improving deposition technology. Investigation secondary optical emission and dependence between optical and electron emission in tetrahedral carbon films, diamond films and carbon related materials.























































Education:























Ph. D. in





Physico





-Mathematical Sciences








1995-99













Concentration: Physics of semiconductors.





Research thesis: Secondary emission in diamond films under laser excitation.





National Research University (Mosco


w Power Engineering Institute).





Moscow, Russia.






























M. S. in Electronic Engineering


1989-95













Concentration: Semiconductors devices and microelectronic.





National Research University (Mosc


ow Power Engineering Institute)


.





Moscow, Russia.


























Additional Education





















































Awards












Received:















Dassault





Systeme


s


,





Solid Works


HW design software














2017

















Intermediate level course completed








Korean Language


course completed at


Pachae


University 2004





Daejon


city, South Korea







Grant-holder President of the Russia 1996-97.





Grant-holder Government of the Russia 1997-98.





Korea Institute of S&T Evaluation and Planning 2000-01.





Eugene





technology - Best Engineer Award, 2008.





Eugene





technology - Special promotion 2010.































Eugene





technology





-


15 Years Employee 2021.